aug.1998 auxiliary cathode connector (red) 500 ?8 gate (white) f 3.5 depth 2.2 ?0.2 cathode 0.4 min 0.4 min type name anode f 85 ?0.2 f 85 ?0.2 f 120 max 26 ?0.5 f 3.5 depth 2.2 ?0.2 mitsubishi gate turn-off thyristors FG4000CX-90DA high power inverter use press pack type FG4000CX-90DA outline drawing dimensions in mm application inverters, d.c. choppers, induction heaters, d.c. to d.c. converters. l i tqrm repetitive controllable on-state current ...........4000a l i t(av) average on-state current .....................1200a l v drm repetitive peak off state voltage ...................4500v l anode short type a a a ka a 2 s a/ m s v v a a w kw w w c c kn g v dm = 3375v, t j = 125 c, c s = 5.0 m f, l s = 0.2 m h f = 60hz, sine wave q = 180 , t f = 78 c one half cycle at 60hz one cycle at 60hz v d = 3400v, i gm = 40a, t j = 125 c recommended value 47 standard value repetitive controllable on-state current rms on-state current average on-state current surge (non-repetitive) on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight i tqrm i t(rms) i t(av) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg symbol parameter conditions ratings 4000 1880 1200 20 1.7 10 6 500 10 19 130 1100 520 33 130 300 C40 ~ +125 C40 ~ +150 38 ~ 54 1600 unit v rrm v rsm v r(dc) v drm v dsm v d(dc) unit symbol parameter v v v v v v voltage class repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + + : v gk = C2v maximum ratings 90da 19 19 19 4500 4500 2500
aug.1998 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? 10 0 23 10 3 5710 4 23 5710 5 23 5710 6 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v p fg(av) = 130w i fgm = 130a t j = 25? i gt = 4000ma p fgm = 520w 0.015 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.006 0.009 0.012 0.003 on-state current (a) on-state voltage (v) maximum on-state characteristic surge on-state current (ka) conduction time (cycles at 60hz) rated surge on-state current gate voltage (v) gate current (ma) gate characteristics thermal impedance (?/ w) time (s) maximum thermal impedance characteristic (junction to fin) 30 24 21 18 12 3 0 9 6 15 27 10 0 23 5710 1 23 5710 2 4.0 100 150 100 10 1.5 4000 0.010 v ma ma ma v/ m s m s a v ma c/w on-state voltage repetitive peak reverse current repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage turn-on time peak gate turn-off current gate trigger voltage gate trigger current thermal resistance t j = 125 c, i tm = 4000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 19v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 4000a, i gm = 40a, v d = 3400v junction to fin mitsubishi gate turn-off thyristors FG4000CX-90DA high power inverter use press pack type electrical characteristics symbol parameter test conditions limits min typ max unit v tm i rrm i drm i rg d v /d t t gt i gqm v gt i gt r th(j-f) t gq turn-off time t j = 125 c, i tm = 4000a, v dm = 3375v, d igq /d t = C50a/ m s v rg = 17v, c s = 5.0 m f, l s = 0.2 m h dc method : v d = 24v, r l = 0.1 w , t j = 25 c 40 m s 1000 1000 performance curves
aug.1998 10.0 8.0 6.0 4.0 2.0 9.0 7.0 5.0 3.0 1.0 0 100 0 20 40 60 80 90 10 30 50 70 t gt t d i t = 4000a v d = 2250v d it /d t = 500a/ m s d ig /d t = 20a/ m s t j = 125?c 8000 6000 5000 3000 1000 0 140 e60 e20 20 60 100 2000 4000 7000 v d = 5 ~ 20v i t = 25 ~ 200a half sine wave 4800 3600 3000 1800 600 0 1200 0 1200 2400 4200 300 600 900 q = 30? 60? 90? 120? 180? resistive, inductive load q 360? 8000 6000 5000 3000 1000 0 2000 0 2000 4000 7000 500 1000 1500 dc 270? q = 30? 60? 90? 120? 180? 360? q resistive, inductive load 140 120 110 90 70 60 2000 0 80 100 130 500 1000 1500 360? q resistive, inductive load q = 30? 180? dc 270? 60? 120? 90? on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (single-phase half wave) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) on temperature (w) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (ma) junction temperature (?c) gate trigger current vs. junction temperature (typical) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) 130 110 100 80 60 50 1200 0 70 90 120 300 600 900 q = 30? 60? 90? resistive, inductive load q 360? 120? 180? mitsubishi ga te turn-off thyrist ors FG4000CX-90DA high power inverter use press p ack type
aug.1998 30 25 20 15 10 5 5000 0 1000 2000 3000 4000 t gq t s v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 5.0 m f l s = 0.2 m h t j = 125? 1200 1000 800 600 400 200 5000 0 1000 2000 3000 4000 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 5.0 m f l s = 0.2 m h t j = 125? 50 40 30 20 10 0 100 50 10 0 20 30 40 60 70 80 90 t gq t s v d = 2250v v dm = 3375v i t = 4000a v rg = 17v c s = 5.0 m f l s = 0.2 m h t j = 125? 1400 1200 1000 800 600 400 100 50 10 0 20 30 40 60 70 80 90 v d = 2250v v dm = 3375v i t = 4000a v rg = 17v c s = 5.0 m f l s = 0.2 m h t j = 125? 8.0 6.0 0 5000 0 1000 2000 3000 4000 2.0 4.0 7.0 5.0 1.0 3.0 v d = 2250v i gm = 40a d ig /d t = 20a/ m s c s = 5.0 m f r s = 5 w t j = 125? d it /d t = 500a / m s 300a / m s 100a / m s 16 12 10 6 2 0 4000 0 4 8 14 1000 2000 3000 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 19v l s = 0.2 m h t j = 125? c s = 2.0 m f 4.0 m f 5.0 m f turn off time t gq , turn off storage time t s ( m s) rate of rise of turn off gate current (a / m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical) turn off time t gq , turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off current (typical) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) switching energy eon (j/p) turn on current (a) turn on switching energy (maximum) switching energy eoff (j/p) turn off current (a) turn off switching energy (maximum) mitsubishi gate turn-off thyristors FG4000CX-90DA high power inverter use press pack type
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